| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee8b5803ad94f16127e7bc9e7e7a73b9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1443
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4232 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022408 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate |
2019-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_153e42727b5af92b1edde57e32531fd8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_578157b5dcb5393e9afc4840de0516b1 |
| publicationDate |
2021-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-3888137-A1 |
| titleOfInvention |
P-i-n photodetector |
| abstract |
A photodetector which comprises a measurement layer (15) and at least a first photoactive layer (11) which covers the measurement layer (15). The measurement layer (15) may be a transistor channel or a charge accumulation electrode. The conductivity type of the measurement layer is n-type, p-type or ambipolar and the first photoactive layer (11) exhibits intrinsic semiconductivity. |
| priorityDate |
2018-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |