| abstract |
A semiconductor device (100) includes type IV semiconductor base substrate (102), first (104) and second (106) device areas that are electrically isolated from one another, a first region of type III-V semiconductor material (108) formed over the first device area, a second region of type III-V semiconductor material (110) formed over the second device area, the second region of type III-V semiconductor material being laterally electrically insulated from the first region of type III-V semiconductor material, a first high-electron mobility transistor (112) integrally formed in the first region, and a second high-electron mobility transistor (114) integrally formed in the second region. The first and second high-electron mobility transistors are connected in series. A source terminal (208) of the first high-electron mobility transistor is electrically connected to the first device area. The first device area is electrically isolated from a subjacent intrinsically doped region of the base substrate by a first two-way voltage blocking device (122). |