| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2020-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9474cc20d5698478d74f3cd06dd3acaf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec7376224d52dfada9b48b86f6b0d264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c6c0f460052d20e2044e2b6ce130d9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e980122b0937ebb79125f5638c94801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e2175c9219bbc793c8dde3f525f64c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16e82716e73d330744ee5851e0fb8bf5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74b86f4ffef9fddea9967d964a3a4813 |
| publicationDate |
2021-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-3886152-A1 |
| titleOfInvention |
Stacked transistor structures with asymmetrical terminal interconnects |
| abstract |
Integrated circuitry comprising stacked first and second transistor structures. One of a source, drain or gate terminal of an upper-level transistor structure is coupled to one of a source, drain or gate terminal of a lower-level transistor structure through an asymmetrical interconnect (295) having a lateral width that increases within a dimension (y) parallel to a semiconductor sidewall of the upper-level transistor by a greater amount than in an orthogonal dimension (x). A dielectric material (230) between the upper and lower transistor structures may be anisotropically etched asymmetrically by orienting a workpiece to be non-orthogonal to a reactive ion flux. Varying an angle between the reactive ion flux and a plane of the second transistor during an etch of the dielectric material may ensure an etched opening is of sufficient bottom dimension to expose a terminal of the lower-level transistor even if not perfectly aligned with the second transistor structure. |
| priorityDate |
2020-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |