abstract |
There is provided a solid-state image sensor, a solid-state imaging device, an electronic apparatus, and a method of manufacturing a solid-state image sensor capable of improving characteristics. There is provided a solid-state image sensor (10) including a stacked structure that includes a semiconductor substrate (500), a first photoelectric converter (PD 200) provided above the semiconductor substrate and converting light into charges, and a second photoelectric converter (PD 100) provided above the first photoelectric converter and converting light into charges, where the first photoelectric converter and the second photoelectric converter include a photoelectric conversion stacked structure in which a common electrode (102, 202), a photoelectric conversion film (104, 204), and a readout electrode (108, 208) are stacked so that the first photoelectric converter and the second photoelectric converter are in a line-symmetrical relationship with each other with a vertical plane perpendicular to a stacking direction of the stacked structure as an axis of symmetry. |