| abstract |
The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal-containing films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group. |