| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c28d4ea320b90ed19f8de42eb1428cc8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 |
| filingDate |
2018-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54a628e7ad0c0ed9b8e4b18114dd46bb |
| publicationDate |
2020-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-3697866-A1 |
| titleOfInvention |
Etching compositions |
| abstract |
The present invention relates to etching compositions which are useful, for example, for selectively removing tantalum (Ta) and / or tantalum nitride (TaN) from a semiconductor substrate as an intermediate step in a process. multi-stage semiconductor fabrication |
| priorityDate |
2017-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |