| abstract |
Methods of removing native oxide layers and depositing dielectric layers having a controlled number of active sites on MEMS devices for biological applications. In one aspect, a method includes removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more vapor-phase ligands to volatilize the native oxide layer and then thermally desorb or, in addition, to etch the volatilized native oxide layer. In another aspect, a method includes depositing a selected dielectric layer to provide a controlled number of active sites on the surface of the substrate. In yet another aspect, a method includes removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands, and depositing a selected dielectric layer to provide a controlled number of active sites. on the surface of the substrate. |