| abstract |
Wrap-around contact structures for semiconductor nanowires and nanoribbons, and methods of fabricating wrap-around contact structures for semiconductor nanowires and nanoribbons, are described. In an example, an integrated circuit structure includes a semiconductor nanowire (part of 110 above break 299) above a first portion of a semiconductor sub-fin (110). A gate structure (173) surrounds a channel portion of the semiconductor nanowire. Source and drain regions (140) are at sides of the gate structure (173), the source or drain regions including epitaxial structures on a second portion of the semiconductor sub-fin, the epitaxial structure having substantially vertical sidewalls in alignment with the second portion of the semiconductor sub-fin. A conductive contact structure (150) is along sidewalls of the second portion of the semiconductor sub-fin and along the substantially vertical sidewalls of the epitaxial structure. |