Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ebca25e4f737729fb927875476e58a9f |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0623 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2017-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a663c4f56f2db9eb9cd15f46d121cbab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46e77980fc2557f5dd17a7fd196fe258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfc99484741f1dcc59209d9ca7c73bfb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f3c1b70a4ed120a8d507c6a11343ceb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebbceab0fcfe15e3843391f2d11d4d2e |
publicationDate |
2019-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-3552230-A1 |
titleOfInvention |
Power semiconductor devices having gate trenches with implanted sidewalls and related methods |
abstract |
Semiconductor devices include a semiconductor layer structure having a wide band-gap semiconductor drift region having a first conductivity type. A gate trench is provided in an upper portion of the semiconductor layer structure, the gate trench having first and second opposed sidewalls that extend in a first direction in the upper portion of the semiconductor layer structure. These devices further include a deep shielding pattern having a second conductivity type that is opposite the first conductivity type in the semiconductor layer structure underneath a bottom surface of the gate trench, and a deep shielding connection pattern that has the second conductivity type in the first sidewall of the gate trench. The devices include a semiconductor channel region that has the first conductivity type in the second sidewall of the gate trench. |
priorityDate |
2016-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |