| abstract |
According to an aspect of the present inventive concept there is provided a method for forming a nanopore (10) in a semiconductor fin (20). The method comprises the steps of providing (S10) a fin structure (100) comprising at least a bottom layer (110) and a top layer (120), pattering (S20) the top layer to form a pillar (122), laterally embedding (S30) the pillar in a filler material (130), forming (S40) an aperture (140) in the filler material by removing the pillar, and forming (S50) the nanopore (10) in the bottom layer by etching through the aperture. |