| abstract |
An integrated circuit (IC) structure, comprising a fin having a source and a drain, wherein the fin comprises silicon, a transistor gate on the fin between the source and the drain, wherein the transistor gate comprises a gate dielectric on the fin, wherein the gate dielectric comprises hafnium, silicon, and oxygen, an NMOS gate electrode on the gate dielectric, wherein the NMOS gate electrode comprises a first layer on the gate dielectric, wherein the first layer comprises aluminum, titanium, and carbon, a second layer on the first layer, wherein the second layer comprises titanium, and a third layer on the second layer, wherein the third layer comprises tungsten, sidewalls on opposing sides of the NMOS gate electrode, a capping structure over the NMOS gate electrode, wherein the capping structure comprises silicon and nitrogen, a dielectric layer adjacent the sidewalls, wherein the dielectric layer comprises silicon and oxygen, and a contact extending through the dielectric layer to one of the source and the drain. |