| abstract |
The present invention relates to a method for formation of a graphene layer (110) on a metal layer (104, 306) arranged in a process chamber of a chemical vapour deposition, CVD, tool. The method (200) comprising: heating (204) the process chamber to a temperature in the range of 800 °C to 900 °C thereby heating the metal layer (104, 306), introducing (206) a carbon-including deposition-gas into the process chamber thereby forming carbon-including precursors, transporting (208) the carbon-including precursors to the metal layer (104, 306) thereby forming the graphene layer (110) on the metal layer (104, 306). |