| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5343449906e9a0e9206b25abb477454e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2017-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5640a9cb7165e8125a9646ac0babd88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_266b75c6f6022cc6a660910fac95e5d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1224e64f0edb0922f2901260afeb2802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ad8175e113af5f7ce22848142393ba2 |
| publicationDate |
2019-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-3443582-A1 |
| titleOfInvention |
Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layers |
| abstract |
Layer structures are described for the formation of Group III-V semiconductor material over Si<110> and Si<100>. Various buffer layers and interfaces reduce the lattice strain between the Group III-V semiconductor material and the Si<110> or Si<100> layers, allowing for the epitaxial formation of high quality Group III-V semiconductor material. |
| priorityDate |
2016-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |