| abstract |
The present invention relates to an infrared device using intra-band electron transition of non-stoichiometric quantum dots and, more specifically, to non-stoichiometric quantum dot nanoparticles and an infrared device comprising the nanoparticles, in which the nanoparticles comprise quantum dot cores and nonthiol ligands bonded to the core and emits infrared rays from electron transition between discrete energy levels in the band. The infrared device according to the present invention has an effect of emitting infrared rays, particularly, mid-infrared rays or far-infrared rays, by using the electron transition between discrete energy levels in the band of quantum dots in which the proportion of a metal is higher than that of a chalcogen. In addition, the quantum dots are prepared by containing nonthiol ligands, and thus, compared with a conventional thiol ligand, ligand substitution is very easy while the n-type doping of quantum dots is maintained. A positive or negative voltage is applied to non-stoichiometric quantum dots, and thus, the transmittance of the light incident to the quantum dots is reversibly controlled. |