| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a911d04aed3ce17150d01a5c90a09db |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1892 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0687 |
| filingDate |
2017-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5e8d545817a495a750f2d2ddff3dac6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_452f2533e8b4ff67e2c252f1c675c505 |
| publicationDate |
2018-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-3408871-A1 |
| titleOfInvention |
Multi-junction optoelectronic device with group iv semiconductor as a bottom junction |
| abstract |
A multi-junction optoelectronic device (200) and method of manufacture are disclosed. The method comprises providing a first p-n structure (208) on a substrate (212), wherein the first p-n structure comprises a first base layer of a first semiconductor with a first bandgap such that a lattice constant of the first semiconductor matches a lattice constant of the substrate, and wherein the first semiconductor comprises a Group III-V semiconductor. The method includes providing a second p-n structure (206), wherein the second p-n structure comprises a second base layer of a second semiconductor with a second bandgap, wherein a lattice constant of the second semiconductor matches a lattice constant of the first semiconductor, and wherein the second semiconductor comprises a Group IV semiconductor. The method also includes lifting off the substrate the multi-junction optoelectronic device having the first p-n structure and the second p-n structure, wherein the multi-junction optoelectronic device is a flexible device. |
| priorityDate |
2016-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |