http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3350846-A1

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filingDate 2016-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2018-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-3350846-A1
titleOfInvention Multistep deposition of zinc oxide on gallium nitride
abstract A method for fabricating a Zinc Oxide (ZnO) conductive film on a semiconductor material, including depositing a doped ZnO seed layer on a diode, wherein the ZnO seed layer forms an electrical contact to the diode; and depositing a ZnO layer on the ZnO seed layer, wherein the ZnO seed layer and the ZnO layer each have a thickness, a crystal quality, and a doping level such that (1) the diode comprising III-nitride material is turned on with a turn on voltage of 2.75 volts or less applied across the ZnO layers and the diode, and (2) a contact resistance, of a structure comprising the ZnO layers and the diode, is lower as compared to a contact resistance of a structure comprising the ZnO layer directly on the diode without the ZnO seed layer.
priorityDate 2015-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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