Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02461 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
filingDate |
2016-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01943bf60908e98a2ab7cdd233e222f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10fe9f5edc441c18d86ba2b64dda197f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc574a7ca258e5e3ab14044cf9e169b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b8b693c0349d363884f14c1f852857e |
publicationDate |
2018-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-3332418-A1 |
titleOfInvention |
Structure for relaxed sige buffers including method and apparatus for forming |
abstract |
Embodiments of the present disclosures provide methods and apparatus for manufacturing semiconductor devices such as transistors used for amplifying or switching electronic signals. Specifically, embodiments of the present disclosure generally relate to a semiconductor device having a film stack including an interlayer of semiconductor material and a buffer layer of semiconductor material underneath an active device layer. In various embodiments, the interlayer may include group III-V semiconductor materials formed between a first surface of a silicon-based substrate and the buffer layer. In certain embodiments the buffer layer may comprise group IV semiconductor materials. The interlayer may have a lattice constant designed to mitigate lattice mismatch between the group IV buffer layer and the silicon-based substrate. The buffer layer may provide improved integration of the active device layer to improve the performance of the resulting device. |
priorityDate |
2015-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |