| abstract |
In described examples, a method (100) of forming bond pads includes providing (101) a substrate including at least one integrated circuit (IC) device formed thereon having an oxidizable uppermost metal interconnect layer, which provides a plurality of bond pads that are coupled to circuit nodes on the IC device. The plurality of bond pads includes a metal bond pad area. A cobalt-comprising connection layer is deposited (102) directly on the metal bond pad area. The cobalt-comprising connection layer is patterned (103) to provide a cobalt bond pad surface for the plurality of bond pads, and a solder material is formed (104) on the cobalt bond pad surface. |