| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b60e6981cd6fe3b173d27dc79d4a4785 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 |
| filingDate |
2016-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_078a624254219c22778293ccd0de7e27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de056ac671029668ec31dbe7fb775d81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ab3192b6a18df83260b01501b901160
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09023d88f82ed48e148015dad73e67ab |
| publicationDate |
2018-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-3271946-A1 |
| titleOfInvention |
Silicon-containing semiconductor structures, methods of making the same and devices including the same |
| abstract |
A semiconductor system includes a silicon substrate and a porous silicon region disposed on the silicon substrate. The porous region is configured to passivate the surface of the silicon substrate via a field effect and to reduce reflection loss on the silicon substrate via an appropriate refractive index. The porous silicon region is manufactured by a strain etching process, which retrofits existing tools for junction isolation and Phosphorous Silicon Glass (PSG) etch in solar cell manufacturing. The retorfitted tools for junction isolation and PSG etch achieves multiple purposes in a single step, including etch-back, PSG etc, antireflection coating, and passivation of the front surface of the solar cell. |
| priorityDate |
2015-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |