| abstract |
The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon oxide layer, with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are wet process ceria particles, have a median particle size of about 75 nm to about 200 nm, and are present in the polishing composition at a concentration of about 0.005 wt.% to about 2 wt.%, a functionalized heterocycle, a cationic polymer selected from a quaternary amine, a cationic polyvinyl alcohol, and a cationic cellulose, optionally a carboxylic acid, a pH adjusting agent, and an aqueous carrier, and have a pH of about 1 to about 6. |