| abstract |
In one embodiment, a method of manufacturing semiconductor devices including metallizations (e.g. a Re-Distribution Layer - RDL metallizations 10) includes: n- providing a capping stack (141, 161, 142, 162) onto the metallizations (10), wherein the stack includes at least one nickel layer, n- including in the stack (141, 161, 142, 162) a pair of nickel layers (141, 142) having therebetween a layer of ductile material (161) such as palladium or gold. |