| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_095fc4a13daf2773d72648d379b28b7d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-028 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-329 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-88 |
| filingDate |
2016-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e20287d3bb5914de820d6e203fdc1b6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb4df42f4306c25ae9af82a5a610df5d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_999b62dfa834929908f630738378487d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1b8894bd4a15961da1e1e94960ce7c9 |
| publicationDate |
2017-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-3232480-A1 |
| titleOfInvention |
A metal-insulator-graphene tunnel diode with bias-induced barrier modulation |
| abstract |
A tunneling diode comprising a first electrically conductive layer comprising graphene and provided with a first work function, a second electrically conductive layer provided with a second work function, an insulating layer arranged between said first electrically conductive layer and said second electrically conductive layer, wherein a tunneling barrier is formed between said first and second electrically conductive layers and a barrier-height of the tunneling barrier depends on said first and second work functions. A bias applied between the first and the second electrically conductive layers modulates said first work function and therefore said barrier-height of the tunneling barrier. |
| priorityDate |
2016-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |