http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3229261-A1

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filingDate 2017-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-3229261-A1
titleOfInvention Semiconductor structures for radio frequency devices and fabrication method thereof
abstract A method for fabricating a semiconductor structure includes providing a wafer and a carrier wafer. The wafer includes a first bonding surface and a plurality of radio-frequency (RF) devices and the carrier wafer includes a second bonding surface. The method further includes performing a surface treatment process on the second bonding surface to convert a surface portion of the carrier wafer into a barrier layer to suppress movement of induced electrical charges in the carrier wafer, and then bonding the wafer with the carrier wafer through the first bonding surface and the second bonding surface, respectively.
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