| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d78efab4551709ed95639d61b59da6b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eaba506ac0032232d1ff2141d20d3e36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8c4dea73cf52cd40a30ac572c2fa567
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61b623cea5c314406460373452b16d56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e7e8ec8ec45cfcf32aecd271ea5f7eb |
| publicationDate |
2017-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-3178115-A1 |
| titleOfInvention |
Apparatus and methods to create microelectronic device isolation by catalytic oxide formation |
| abstract |
Non-planar transistor devices which include oxide isolation structures formed in semiconductor bodies thereof through the formation of an oxidizing catalyst layer on the semiconductor bodies followed by an oxidation process. In one embodiment, the semiconductor bodies may be formed from silicon-containing materials and the oxidizing catalyst layer may comprise aluminum oxide, wherein oxidizing the semiconductor body to form an oxide isolation zone forms a semiconductor body first portion and a semiconductor body second portion with the isolation zone substantially electrically separating the semiconductor body first portion and the semiconductor body second portion. |
| priorityDate |
2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |