| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-342
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 |
| filingDate |
2016-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5290a5ee9192dd176b903094e94c06a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a1a62fffe6926a274f503bda1f17ec4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28ef31e4c9638961ead85de93bc26338 |
| publicationDate |
2017-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-3121309-A1 |
| titleOfInvention |
Methods for depositing group 13 metal or metalloid nitride films |
| abstract |
Described herein are methods for forming a Group 13 metal or metalloid nitride film. In one aspect, there is provided a method of forming an aluminum nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising non-hydrogen containing nitrogen plasma into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm 2 ; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11655262-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019120650-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11319332-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020244988-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020244989-A1 |
| priorityDate |
2015-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |