http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3000912-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa6e4421d9e1159b6012d9bf702be572 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F15-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F15-04 |
| filingDate | 2013-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ba7a7e8d11db1399fed140f2eb9183f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a247b030448713f1e04d0285fda3ce66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa622f0890fcfd7a00db55b1e6e50b79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09aa2a5254caf70e5fb6a37d221b5218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49f7811a40b7935adbedd59f402394a9 |
| publicationDate | 2016-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-3000912-A1 |
| titleOfInvention | Chemical vapor deposition raw material comprising organic nickel compound, and chemical vapor deposition method using said chemical vapor deposition raw material |
| abstract | The present invention provides a chemical vapor deposition raw material, which has a low melting point, has heat stability such that no thermal decomposition occurs during vaporization, readily decomposes at low temperature during film-formation, and can stably form a nickel thin-film having fewer impurities. The present invention relates to a chemical vapor deposition raw material containing an organic nickel compound, in which a cyclopentadienyl group or a derivative thereof is coordinated to nickel, and a cycloalkenyl group having one allyl group or a derivative thereof is coordinated to the carbon skeleton of cycloalkyl. This raw material has a low melting point, proper heat stability and film-formation ability at low temperature. Further, due to a high vapor pressure, the raw material is suitable for a three-dimensional electrode material having a three-dimensional structure. |
| priorityDate | 2013-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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