http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2985783-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fc6220b93fae4be14ada49e4ecc1860b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-3209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02074 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-3218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-3281 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-32 |
| filingDate | 2014-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dabfbbf0a5be6d0ad4c1eccf61957ec9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14f9cd156f44fba3c0cd6d90e4696613 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1c8a93de6f3010384b281d7fa64bc4e |
| publicationDate | 2016-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2985783-A1 |
| titleOfInvention | Cleaning agent for metal wiring substrate, and method for cleaning semiconductor substrate |
| abstract | It is a subject of the present invention to provide a cleaning agent for a substrate having a metal wiring, and a cleaning method for a semiconductor substrate comprising that the cleaning agent is used, by which following effects (1) to (5) are obtained, in a cleaning process after chemical mechanical polishing (CMP) in a manufacturing process of a semiconductor device. (1) Residues of fine particles (polishing agents) used in the CMP process, fine particles (metal particles) derived from a polished metal, an anticorrosive, and the like, can be removed sufficiently. (2) A coating film (protective film: oxidation resistant film) on a surface of the metal wiring, containing a complex between an anticorrosive, such as benzotriazole or quinaldic acid, and a surface metal of the metal wiring, formed in the CMP process, can be removed (stripped) sufficiently. (3) An oxide film containing a metal oxide can be formed after removal (stripping) of the coating film. (4) A semiconductor substrate can be obtained stably for a long period of time, without impairing flatness of the surface of the metal wiring (the surface of the oxide film containing the metal oxide), even leaving a substrate after the cleaning process after the CMP. (5) It is hard to deteriorate even after using the cleaning agent for a long period of time. n The present invention relates to a cleaning agent for a substrate having a metal wiring, comprising an aqueous solution containing (A) carboxylic acid having a nitrogen-containing heterocyclic ring and (B) alkylhydroxylamine, and having a pH of 10 or higher, as well as a cleaning method for a semiconductor substrate, comprising that the cleaning agent is used. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3564985-A4 |
| priorityDate | 2013-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 283.