| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b55c349b43c3ecba4977fd52cc8f8c67 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B2307-416 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B5-282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B17-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B5-285 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B15-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B5-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 |
| filingDate |
2014-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c57a0cbdd4533d70bf7c851653b0a04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e27b43de747078a7efcbe2320b5ddfe0 |
| publicationDate |
2015-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2952939-A1 |
| titleOfInvention |
Method for producing infrared radiation reflecting film |
| abstract |
The method for manufacturing an infrared reflecting film comprises, in order: a metal layer forming step of depositing a metal layer (25) on a transparent film substrate (10); a metal oxide layer forming step of depositing a surface-side metal oxide layer (22) by DC sputtering on the metal layer (25) so as to be in direct contact with the metal layer (25); and a transparent protective layer forming step of depositing a transparent protective layer (30) on the surface-side metal oxide layer (22). In the metal oxide layer forming step, a sputtering target used for DC sputtering contains zinc atoms and tin atoms, and is preferably formed by sintering a metal powder and at least one metal oxide among zinc oxide and tin oxide. In the surface-side metal oxide layer forming step, an inert gas and an oxygen gas are introduced into a sputtering chamber. The oxygen concentration in the gas introduced to the sputtering chamber is preferably not more than 8 vol%. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017030348-A |
| priorityDate |
2013-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |