| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_129e393582e6bdf4029baf2206522f45 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31598
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2483-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2367-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2365-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2475-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J7-0423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J7-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J7-048 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J7-048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J7-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-10 |
| filingDate |
2013-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a032af06833e18b9013ce9f8a86cf6ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b4a8bff86fbf2f5c0b702f18ebde67b |
| publicationDate |
2015-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2944460-A1 |
| titleOfInvention |
Gas barrier film |
| abstract |
[Problem] The present invention aims to provide gas barrier film that has high gas barrier properties and high flex resistance. [Solution] The gas barrier film according to the invention includes a polymer base having an inorganic layer [A] and a silicon compound layer [B] stacked in this order at least on one side of the polymer base, the inorganic layer [A] containing a zinc compound and silicon oxide, the silicon compound layer [B] containing silicon oxynitride, and the inorganic layer [A] and the silicon compound layer [B] being in contact with each other. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018154012-A |
| priorityDate |
2013-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |