| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_04156eac6d180360a396aac1dbbf2f03 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03923
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate |
2013-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e50e4aa352e80840935b7d3862b317d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b75f509159aaea0eaa923400ba87c40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06ef446f253cc1b536e68bf9e0a0f125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98fb8f3da97f1353d5f808418f678438
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_febccbfe9849763dfc1bc141542f84fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cfe1f603ced705f095e2756d6910120
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8f9c214223809b1f849158c43727a7a |
| publicationDate |
2015-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2917941-A2 |
| titleOfInvention |
Molybdenum substrates for cigs photovoltaic devices |
| abstract |
Photovoltaic (PV) devices and solution-based methods of making the same are described. The PV devices include a CIGS-type absorber layer formed on a molybdenum substrate. The molybdenum substrate includes a layer of low- density molybdenum proximate to the absorber layer. The presence of low- density molybdenum proximate to the absorber layer has been found to promote the growth of large grains of CIGS-type semiconductor material in the absorber layer. |
| priorityDate |
2012-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |