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filingDate 2015-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2897160-A1
titleOfInvention Method of manufactoring semiconductor device
abstract An object of the invention is to provide a semiconductor device having improved performance. A method of manufacturing a semiconductor device includes: forming a trench and then forming a first insulating film made of a silicon oxide film through CVD using a gas containing an O 3 gas and a TEOS gas to cover the side surface of the trench with the insulating film; forming a second insulating film made of a silicon oxide film through PECVD to cover the side surface of the trench with the second insulating film via the first insulating film; and forming a third insulating film made of a silicon oxide film through CVD using a gas containing an O 3 gas and a TEOS gas to close the trench with the third insulating film while leaving a space in the trench.
priorityDate 2014-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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