http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2879184-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe950d708c7cd3395969c85dcbe67c67 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
filingDate | 2014-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e57981d734bd8dc8033d1a9cf0b7fba |
publicationDate | 2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-2879184-A1 |
titleOfInvention | Group III-V transistor with semiconductor field plate |
abstract | There are disclosed herein various implementations of a group III-V transistor with a semiconductor field plate (350). Such a group III-V transistor includes a group III-V heterostructure (310) situated over a substrate (312) and configured to produce a two-dimensional electron gas (2DEG). In addition, the group III-V transistor includes a source electrode (230), a drain electrode (320), and a gate (340) situated over the group III-V heterostructure. The group III-V transistor also includes an insulator layer (360) over the group III-V heterostructure and situated between the gate and the drain electrode, and a semiconductor field plate (350) situated between the gate and the drain electrode, over the insulator layer. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023069796-A1 |
priorityDate | 2013-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.