http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2879184-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
filingDate 2014-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e57981d734bd8dc8033d1a9cf0b7fba
publicationDate 2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2879184-A1
titleOfInvention Group III-V transistor with semiconductor field plate
abstract There are disclosed herein various implementations of a group III-V transistor with a semiconductor field plate (350). Such a group III-V transistor includes a group III-V heterostructure (310) situated over a substrate (312) and configured to produce a two-dimensional electron gas (2DEG). In addition, the group III-V transistor includes a source electrode (230), a drain electrode (320), and a gate (340) situated over the group III-V heterostructure. The group III-V transistor also includes an insulator layer (360) over the group III-V heterostructure and situated between the gate and the drain electrode, and a semiconductor field plate (350) situated between the gate and the drain electrode, over the insulator layer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023069796-A1
priorityDate 2013-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.