http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2843689-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fc6220b93fae4be14ada49e4ecc1860b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02074 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-3218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2013-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dabfbbf0a5be6d0ad4c1eccf61957ec9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26b6045d59f8fa06c6f734206d5487a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1c8a93de6f3010384b281d7fa64bc4e |
| publicationDate | 2015-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2843689-A1 |
| titleOfInvention | Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface |
| abstract | The purpose of the present invention is to provide: a cleaning agent for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. The present invention relates to a cleaning agent for a semiconductor substrate to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7; and a method for processing a semiconductor substrate surface. |
| priorityDate | 2012-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 679.