http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2842169-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2bed4b4d247d7fe14cfd9610d22c463 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02557 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 |
| filingDate | 2013-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e2501b95aed638410becd285d1bd05c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b53c7b3d36d776b0a438bb3973ff840 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f6b34a05fa6b0f68f78204da5609f86 |
| publicationDate | 2015-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2842169-A1 |
| titleOfInvention | Method for producing the pentanary compound semiconductor cztsse doped with sodium |
| abstract | The present invention pertains to a method for producing a layered stack for manufacturing a thin film solar cell having a compound semiconductor of the type Cu2ZnSn(S,Se)4, comprising the following steps of: providing a substrate; depositing a barrier layer consisting of a material adapted to inhibit the diffusion of alkali metals on said substrate; depositing an electrode layer on said barrier layer; depositing a first precursor layer comprising the metals copper, zinc and tin; depositing a second precursor layer comprising at least one chalcogene selected from sulphur and selenium on said first precursor layer; annealing said precursor layers to crystallize said compound semiconductor; supplying at least one process gas during annealing of said first and second precursor layers, wherein (i) in case sulphur or selenium is contained in said second precursor layer, the other chalcogen and/or a compound containing the other chalcogen is contained in said process gas, or (ii) in case sulphur and selenium are contained in said second precursor layer, sulphur and/or selenium and/or a compound containing sulphur and/or a compound containing selenium is contained in said process gas; depositing of elemental sodium and/or a sodium-containing compound (i) on said precursor layers and/or said electrode layer in advance of said annealing of said precursor layers, (ii) on said precursor layers during said annealing of said precursor layers, and/or (iii) on said compound semiconductor after annealing of said precursor layers; wherein said compound semiconductor is produced in such a manner that definite sodium and sulphur depth profiles between a first boundary face and a second boundary face of said compound semiconductor are obtained. |
| priorityDate | 2012-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.