http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2818586-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37f4922dfb7777b019e504b885211b8e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a61ec84e6d934b82d48a878ec078ebb |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B1-023 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B1-02 |
| filingDate | 2014-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2700299ca4c6585b3705f64c8c197ee5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9d4ff8e21e39221206779e9b2c7fdd6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a47aa4073f4b76a049d2c72e6a4e8038 |
| publicationDate | 2014-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2818586-A1 |
| titleOfInvention | Electrode with nucleation layer for epitaxy |
| abstract | The invention relates to an electrode comprising a nucleation layer for epitaxial growth, comprising successively (a) an electroconductive layer having a surface roughness such that the Rq (ISO standard 4287) is less than 20 nm, preferably less than 10 nm, in particular less than 5 nm, said electroconductive layer being preferably supported by a substrate, (b) a barrier layer of an electroconductive metal nitride selected from nitrides of titanium (TiN), boron (BN), tantalum (TaN), aluminum (AlN), tungsten (W 2 N) , molybdenum (Mo 2 N), niobium (NbN) and chromium (CrN) having a thickness of between 2 nm and 100 nm, preferably between 5 and 50 nm and in particular between 8 and 20 nm, and (d) a crystalline silicon and / or germanium layer consisting of one or more monocrystals, contiguous or not, all oriented so that their crystalline plane (111) is substantially parallel to the surface of the barrier layer and having a thickness less than 100 nm, preferably between 10 and 80 nm, in particular between 15 and 50 nm. |
| priorityDate | 2013-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 63.