| abstract |
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided an aza-polysilane precursor comprising at least two Si-N bonds, at least one Si-Si bond, and at least two SiH 2 groups represented by the following Formula IA, IB and IC:n nwherein R 1 and R 2 are independently selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, C 3 to C 10 cyclic alkyl group, C 3 to C 10 hetero-cyclic alkyl group, a C 5 to C 10 aryl group, and a C 3 to C 10 hetero-aryl group, a C 2 to C 10 dialkylamino group, a C 3 to C 10 cyclic alkylamino group; R 3 and R 4 are independently selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 2 to C 10 alkenyl group, a linear or branched C 2 to C 10 alkynyl group, C 3 to C 10 cyclic alkyl group, C 3 to C 10 hetero-cyclic alkyl group, a C 5 to C 10 aryl group, and a C 3 to C 10 hetero-aryl group, a C 2 to C 10 dialkylamino group, a C 3 to C 10 cyclic alkylamino group; wherein R 1 in Formula IA cannot be methyl, R 1 and R 2 in Formula IB cannot both be iso-propyl, both be tert-butyl or both be benzyl and R 3 and R 4 cannot both be methyl or both be phenyl. |