http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2815470-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_15ee88d8a92f52a7abf3c8d78c5496a5 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1237 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0607 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-343 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate | 2012-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27b64ccb8b997bdb49153175cd567ce6 |
| publicationDate | 2014-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2815470-A1 |
| titleOfInvention | Tunable semiconductor device and method for making tunable semiconductor device |
| abstract | Method and apparatus for a tunable laser device. In one aspect, a tunable laser device (100) comprises a first doped cladding layer (104) on a semiconductor substrate (102), a first waveguide layer (106) of essentially undoped piezoelectric material on a top surface of the first doped cladding layer (104), an active layer (108) on the top surface of the first waveguide layer (106), a second waveguide layer (110) of essentially undoped piezoelectric material on the top surface of the active layer (108), a longitudinal structure (114) parallel to a longitudinal axis of the semiconductor device on a top surface (113) of the second waveguide layer (110) comprising a doped semiconductor material, and a longitudinal interdigitated transducer IDT (116,118) formed on the top surface (113) of the second waveguide layer (110) or on the bottom surface of the first waveguide layer, the IDT extending longitudinally in a direction parallel to the longitudinal axis and being arranged to, in response to a signal from a signal generator, generate a surface acoustic wave (SAW) in a direction parallel to the longitudinal axis. |
| priorityDate | 2012-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.