http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2799852-A1

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filingDate 2014-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fdcb6070ab187d676b79ca94f55ae02f
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publicationDate 2014-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2799852-A1
titleOfInvention 2DEG-based sensor and device for ECG sensing
abstract The invention relates to a sensor (1) comprising: a substrate layer (100); a GaN/AlGaN hetero-junction structure (105, 110) configured so as to form a 2DEG channel (120) within said structure; and ohmic contacts (115) connected to electrical metallizations (125) and to the 2DEG channel; wherein the GaN/AlGaN hetero-junction structure (105, 110) has a recessed area between the ohmic contacts (115); and a dielectric layer (130) on top of the sensor. The invention also relates to a device for ECG sensing, a use of a sensor for ECG sensing and a method for ECG detection.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017153906-A3
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priorityDate 2013-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 32.