| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a188d15e53f61fc61b985decfe6ec8cc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M10-052 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-1395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-0404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1651
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-0492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-386
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00539 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-16 |
| filingDate |
2012-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_629c74f3e578c1b503ac2ea30148c6a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e168de23c9780605f774461ee907f49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a120b843ea2a6913dc2d6222ef57e376 |
| publicationDate |
2014-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2794954-A2 |
| titleOfInvention |
Etched silicon structures, method of forming etched silicon structures and uses thereof |
| abstract |
A method of etching silicon, the method comprising the steps of: electrolessly depositing a first metal onto a silicon surface to be etched, wherein the electrolessly deposited first metal partially covers the surface of the silicon to be etched; depositing a second metal that is different from the first metal over the silicon surface and the electrolessly deposited first metal, wherein a film of the deposited second metal covers the silicon surface to be etched; removing the first metal and the second metal from regions of the film of the deposited second metal that overlie the first metal to leave the second metal partially covering the silicon surface to be etched; and etching the silicon by exposing the silicon surface to an aqueous etching composition comprising an oxidant and a source of fluoride ions. |
| priorityDate |
2011-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |