http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2786963-A1

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2053
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-035
filingDate 2012-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c36901e5bd3bf08a7121b516fbf894e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_207afdf747ab3fa114a889ec1dab0ae6
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publicationDate 2014-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2786963-A1
titleOfInvention Production method for polycrystalline silicon, and reactor for polycrystalline silicon production
abstract The present invention provides a method of producing polycrystalline silicon in which silicon is precipitated on a silicon core wire to obtain a polycrystalline silicon rod. In an initial stage (former step) of a precipitation reaction, a reaction rate is not increased by supplying a large amount of source gas to a reactor but the reaction rate is increased by increasing a concentration of the source gas to be supplied, and in a latter step after the former step, the probability of occurrence of popcorn is reduced using an effect of high-speed forced convection caused by blowing the source gas into the reactor at high speed. Thus, a high-purity polycrystalline silicon rod with little popcorn can be produced without reducing production efficiency even in a reaction system with high pressure, high load, and high speed.
priorityDate 2011-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.