| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_49fbf16ba25e2c5f7996c1d751530b0b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022441 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 |
| filingDate |
2013-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d084e4ba47b9173cbbb342b7ecb82f83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7663aba6dacb4636662df99130091f4f |
| publicationDate |
2014-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2770544-A1 |
| titleOfInvention |
Method for forming metal silicide layers |
| abstract |
The present invention is directed to a method for forming a metal silicide layer on a non-textured silicon substrate surface, the method comprising: n- providing a metal layer on a non-textured silicon substrate, n- subsequently performing a pulsed laser annealing step providing at least one laser pulse, thereby converting at least part of the metal layer into a metal silicide layer. n In the addition, the present invention is directed to the use of such method in back side metallization of a photovoltaic cell. |
| priorityDate |
2013-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |