http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2765596-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe950d708c7cd3395969c85dcbe67c67
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-188
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3171
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
filingDate 2014-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e57981d734bd8dc8033d1a9cf0b7fba
publicationDate 2014-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2765596-A1
titleOfInvention Ion implantation at high temperature surface equilibrium conditions
abstract There are disclosed herein various implementations of a method and system for ion implantation at high temperature surface equilibrium conditions. The method may include situating a III-Nitride semiconductor body in a surface equilibrium chamber, establishing a gas pressure greater than or approximately equal to a surface equilibrium pressure of the III-Nitride semiconductor body, and heating the III-Nitride semiconductor body to an elevated implantation temperature in the surface equilibrium chamber while substantially maintaining the gas pressure. The method also includes implanting the III-Nitride semiconductor body in the surface equilibrium at the elevated implantation temperature chamber while substantially maintaining the gas pressure, the implanting being performed using an ion implanter interfacing with the surface equilibrium chamber.
priorityDate 2013-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004107906-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010051266-A2
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID80922
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID128361982

Total number of triples: 19.