http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2719663-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1229111a198f86af4112ecd730b55cd9 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-035 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-035 |
| filingDate | 2013-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_420f84b71310f0d7017eb7f6b2c74d68 |
| publicationDate | 2014-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2719663-A1 |
| titleOfInvention | Process for deposition of polycrystalline silicon |
| abstract | The invention relates to a process for the deposition of polycrystalline silicon, comprising introducing a reaction gas containing a silicon-containing component and hydrogen into a reactor, whereby polycrystalline silicon is deposited in the form of rods, characterized in that after completion of the deposition attacking a silicon or silicon-containing compounds Gas is passed into the reactor, which flows around the polycrystalline rods and a reactor inner wall to dissolve in the deposition formed, adhering to the reactor inner wall or to the polycrystalline silicon rods silicon particles before the polycrystalline silicon rods are removed from the reactor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021008693-A1 |
| priorityDate | 2012-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.