| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d1a5b26dca07e6be5ea9c95982741a7e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-151
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D179-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L79-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| filingDate |
2012-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f9da372121bfbc47e3ccbcdfb9b61fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5616e2006af84eb288768abfb9b9bc42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48ee6514a4c763f2429f6a1cb6386815
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d68afdb8e705ac1e90d6f6ff4d06bbf4 |
| publicationDate |
2014-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2715820-A1 |
| titleOfInvention |
Transistors and methods for making them |
| abstract |
A semiconductor composition which comprises a soluble polyacene semiconductor and a polymeric semiconducting binder the binder having a permittivity greater than 3.4 at 000 Hz.The charge mobility of the semiconducting binder when measured in a pure state is greater than 10 -7 cm 2 /Vs and more preferably greater than 10 -6 cm 2 /Vs. Organic thin film transistors in which the source and drain electrodes are bridged by the semiconductorcomposition have desirable properties of reproducibility and charge mobility. The organic semiconducting composition can be applied by solution coating. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2715818-B1 |
| priorityDate |
2011-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |