abstract |
A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of Al xhigh Ga 1-xhigh N doped with a p-type dopant and Al xlow Ga 1-xlow N doped with the p-type dopant, where x low ≤ x high ≤ 0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN. |