| abstract |
Disclosed herein are non-oxygen containing silicon-based films, and methods for forming the same. The non-oxygen silicon-based films contain >50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 49 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH 3 groups with at least one C 2-3 linkage between silicon atoms, such as 1,4-disilabutane. |