| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b9a255559e1d94f20510a17a673b1078 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18369
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0042 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03B17-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34313
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G04F5-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18358
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G04F5-14 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate |
2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1eb84d09e46bca6a97f6391b27719794 |
| publicationDate |
2014-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2686923-A1 |
| titleOfInvention |
Surface-emitting laser element, atomic oscillator, and surface-emitting laser element testing method |
| abstract |
A disclosed surface-emitting laser element includes a lower DBR formed on a substrate, an active layer formed on the lower DBR, an upper DBR formed on the active layer, a wavelength-adjusting layer formed above the active layer, and a plurality of surface-emitting lasers configured to emit respective laser beams having different wavelengths by changing a thickness of the wavelength-adjusting layer. In the surface-emitting laser element, the wavelength-adjusting layer includes one of a first film having alternately layered GaInP and GaAsP and a second film having alternately layered GaInP and GaAs, the thickness of the wavelength-adjusting layer being changed by partially removing each of the alternating layers of a corresponding one of the first and second films. |
| priorityDate |
2011-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |