http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2681740-A1

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filingDate 2012-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2014-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2681740-A1
titleOfInvention Local write and read assist circuitry for memory device
abstract Memory device having complementary global and local bit-lines, the complementary local bit-lines being connectable to the complementary global bit-lines by means of a local write receiver which is configured for creating a full voltage swing on the complementary local bit lines from a reduced voltage swing on the complementary global bit lines. The local write receiver comprises a connection mechanism for connecting the local to the global bit-lines and a pair of cross-coupled inverters directly connected to the complementary local bit lines for converting the reduced voltage swing to the full voltage swing on the complementary local bit lines.
priorityDate 2011-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 24.