| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3e035457406455ea05989c01cb90c8f1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2201-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2202-101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2202-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2202-106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2202-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-3556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-01791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2203-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-3534 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-355
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-39 |
| filingDate |
2012-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea2a0cf82977ef23c6c5fda5c0a68a88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ab68432b24df992f78e5426c64fc92e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cbb74a744efd8a877a1609d15b0458a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85fdd5d7bd43bcb0fe733d4bedaa1779 |
| publicationDate |
2013-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2676167-A1 |
| titleOfInvention |
Terahertz source with quantum dot material |
| abstract |
The generation of terahertz electromagnetic radiation, using a laser which is incident upon an electrically biased photoconductor and an antenna. The device has a layered structure comprising a semiconductor substrate below a wetting layer (55) epitaxially grown on the substrate, barrier layers (57) are positioned above and below a quantum dot layer (59). A contact layer (60) is provided with a contact (61) which couples the quantum dot structure to a voltage source (63). The reduction of the carrier lifetime in a conducting state, allied to its high carrier mobility that is possibly comparable to that of bulk GaAs can provide fast photoconductive devices and produce sources of terahertz radiation. |
| priorityDate |
2011-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |