| abstract |
Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises an abrasive; a chemical additive selected from i) piperazine derivatives, ii) 4-morpholine derivatives, iii) organic amino sulfonic acid derivatives and their salts, iv) substituted amine compounds and their salts, v) bis-amine compounds and their salts and a liquid carrier and having a pH of 2-8. The CMP compositions and the methods provide enhanced removing rate for "SiC" , SiN" and "SiC x N y " films; and tunable removal selectivity for "SiC" with respect to SiO 2 , "SiN" with respect to SiO 2 , "SiC" with respect to "SiN", or "SiC x N y " with respect to SiO 2 ; wherein x ranges from 0.1wt% to 55wt%, y ranges from 0.1 wt % to 32 wt %. |